QUANTUM CONFINEMENT EFFECTS ABOVE THE FUNDAMENTAL-BAND GAP IN HGTE HG0.3CD0.7TE HETEROSTRUCTURES STUDIED BY RESONANT RAMAN-SCATTERING NEAR THE E(1) EDGE/

Citation
R. Atzmuller et al., QUANTUM CONFINEMENT EFFECTS ABOVE THE FUNDAMENTAL-BAND GAP IN HGTE HG0.3CD0.7TE HETEROSTRUCTURES STUDIED BY RESONANT RAMAN-SCATTERING NEAR THE E(1) EDGE/, Physical review. B, Condensed matter, 54(23), 1996, pp. 16907-16918
Citations number
42
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
0163-1829
Volume
54
Issue
23
Year of publication
1996
Pages
16907 - 16918
Database
ISI
SICI code
0163-1829(1996)54:23<16907:QCEATF>2.0.ZU;2-#
Abstract
We have investigated the resonance enhancement of the Raman scattering efficiency of the TO, LO, and 2LO phonon processes in a series of HgT e/Hg0.3Cd0.7Te heterostructures with (001), (110), and (111) orientati ons at the E(1) band gap. In addition, interface modes and localized d efect modes;have been observed. Quantum confinement effects could be d etected at the E(1) transition in this system and a second (excited) e lectronic subband was verified. For the (110) and (111) orientations, the electronic degeneracy at the E(1) gap is lifted and two resonance maxima appear, in accordance with the transverse effective mass (0.145 m(0)) derived for a (001) grown sample. Selection rules for Raman back scattering from zinc-blende heterostructures in the vicinity of the E( 1) gap have been derived for deformation-potential and Frohlich intrab and coupling and are compared with experimental results.