FORMATION OF INGAAS LAYERS ONTO INP SUBSTRATES BY LIQUID-PHASE EPITAXY

Citation
Nn. Syrbu et al., FORMATION OF INGAAS LAYERS ONTO INP SUBSTRATES BY LIQUID-PHASE EPITAXY, Optics communications, 132(5-6), 1996, pp. 449-451
Citations number
7
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Optics
Journal title
ISSN journal
0030-4018
Volume
132
Issue
5-6
Year of publication
1996
Pages
449 - 451
Database
ISI
SICI code
0030-4018(1996)132:5-6<449:FOILOI>2.0.ZU;2-Q
Abstract
The results of In0.53Ga0.47As-InP epitaxial structure interface invest igation are presented. It is shown that the transition from InP to In0 .53Ga0.47,As layer is associated with an interfacial transitional laye r formation with a gradient composition. The dynamics of such layer fo rmation has been followed by infrared spectroscopy.