EXPERIMENTAL AND MONTE-CARLO ANALYSIS OF IMPACT-IONIZATION IN ALGAAS GAAS HBTS/

Citation
C. Canali et al., EXPERIMENTAL AND MONTE-CARLO ANALYSIS OF IMPACT-IONIZATION IN ALGAAS GAAS HBTS/, I.E.E.E. transactions on electron devices, 43(11), 1996, pp. 1769-1777
Citations number
31
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Applied
ISSN journal
0018-9383
Volume
43
Issue
11
Year of publication
1996
Pages
1769 - 1777
Database
ISI
SICI code
0018-9383(1996)43:11<1769:EAMAOI>2.0.ZU;2-T
Abstract
We present a detailed experimental and theoretical investigation of ho t electron effects occurring in AlGaAs/GaAs Heterojunction Bipolar Tra nsistors (HBT's) operating at low current densities, Electrons heated by the strong electric field at the base-collector junction give rise to impact ionization and light emission, A new general purpose weighte d Monte Carlo procedure has been developed to study such effects. The importance of dead-space effects on the multiplication factor of the d evice is demonstrated. Good agreement is found between theory and expe riment.