CARRIER LIFETIME AND X-RAY-IMAGING CORRELATIONS OF AN OXIDE-INDUCED STACKING-FAULT RING AND ITS GETTERING BEHAVIOR IN CZOCHRALSKI SILICON

Citation
J. Raebiger et al., CARRIER LIFETIME AND X-RAY-IMAGING CORRELATIONS OF AN OXIDE-INDUCED STACKING-FAULT RING AND ITS GETTERING BEHAVIOR IN CZOCHRALSKI SILICON, Applied physics letters, 69(20), 1996, pp. 3037-3038
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
0003-6951
Volume
69
Issue
20
Year of publication
1996
Pages
3037 - 3038
Database
ISI
SICI code
0003-6951(1996)69:20<3037:CLAXCO>2.0.ZU;2-4
Abstract
The characterization of a unique crystal originated and thermally acti vated defect zone in Si wafers called an oxide-induced stacking fault (OSF) ring has been carried out using two noncontacting techniques. Th e minority-carrier lifetime has been mapped using the laser microwave photoconductance decay (LM-PCD) method and correlated with a transmiss ion x-ray topographic image of the wafer. Additional details of the la teral and depth dependent stacking fault density were revealed by pref erential etching. The minority-carrier lifetime within the annular OSF ring itself was about one order of magnitude lower than that outside the ring, while intermediate lifetime values were observed inside the ring. Temperature-dependent LM-PCD measurements revealed that a redist ribution of the metallic impurity Fe occurred via gettering by the sta cking faults. These findings were confirmed and quantified by deep-lev el transient spectroscopy. Implications for radial variations in devic e yield are discussed in the context of the depth distribution of the extended defects, their impurity gettering action, and wafer-to-wafer variations in the nature of the OSF ring. (C) 1996 American Institute of Physics.