CHARACTERIZATION OF SILICON-NITRIDE FILMS FORMED BY SYNCHROTRON RADIATION-EXCITED CHEMICAL-VAPOR-DEPOSITION

Authors
Citation
H. Kyuragi, CHARACTERIZATION OF SILICON-NITRIDE FILMS FORMED BY SYNCHROTRON RADIATION-EXCITED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3305-3315
Citations number
53
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
ISSN journal
1071-1023
Volume
14
Issue
5
Year of publication
1996
Pages
3305 - 3315
Database
ISI
SICI code
1071-1023(1996)14:5<3305:COSFFB>2.0.ZU;2-R
Abstract
From a standpoint of physical, chemical, and electrical properties, si licon nitride films formed by synchrotron radiation-excited chemical v apor deposition with SiH4+N-2 gas mixture are characterized. These pro perties are compared with the properties of films deposited by other l ow-temperature processes. It is found that the present film has such f eatures as lower hydrogen content (<4x10(21) cm(-3)), higher film dens ity (2.9-3.05 g/cm(3)), lower etching rate against BHF (<10 nm/min), a nd potentially improved electrical properties considering that deposit ion was performed at substrate temperatures as low as 200 degrees C. D eposition kinetics, the effect of bias on film properties, and ways to improve the electrical properties are also discussed. (C) 1996 Americ an Vacuum Society.