H. Kyuragi, CHARACTERIZATION OF SILICON-NITRIDE FILMS FORMED BY SYNCHROTRON RADIATION-EXCITED CHEMICAL-VAPOR-DEPOSITION, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(5), 1996, pp. 3305-3315
From a standpoint of physical, chemical, and electrical properties, si
licon nitride films formed by synchrotron radiation-excited chemical v
apor deposition with SiH4+N-2 gas mixture are characterized. These pro
perties are compared with the properties of films deposited by other l
ow-temperature processes. It is found that the present film has such f
eatures as lower hydrogen content (<4x10(21) cm(-3)), higher film dens
ity (2.9-3.05 g/cm(3)), lower etching rate against BHF (<10 nm/min), a
nd potentially improved electrical properties considering that deposit
ion was performed at substrate temperatures as low as 200 degrees C. D
eposition kinetics, the effect of bias on film properties, and ways to
improve the electrical properties are also discussed. (C) 1996 Americ
an Vacuum Society.