TEST OF THE LOCALIZATION SCALING RELATION IN 2 DIMENSIONS

Citation
Fw. Vankeuls et al., TEST OF THE LOCALIZATION SCALING RELATION IN 2 DIMENSIONS, Czechoslovak journal of Physics, 46, 1996, pp. 2531-2532
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
ISSN journal
0011-4626
Volume
46
Year of publication
1996
Supplement
5
Pages
2531 - 2532
Database
ISI
SICI code
0011-4626(1996)46:<2531:TOTLSR>2.0.ZU;2-3
Abstract
Experimental data on localization in two-dimensional GaAs/AlGaAs heter ostructures are compared with the scaling theory of localization. All states are found to be localized at T = 0 and B = 0 in contrast to rec ent reports of a metal-to-insulator transition in a Si MOSFET sample. Qualitative agreement with the predicted scaling of the localization l ength with the elastic scattering length is found at B = 0.