LBIC CHARACTERIZATION OF LPE SI LAYERS DEPOSITED ON MULTICRYSTALLINE SI SUBSTRATES

Citation
M. Stemmer et al., LBIC CHARACTERIZATION OF LPE SI LAYERS DEPOSITED ON MULTICRYSTALLINE SI SUBSTRATES, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 153-156
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
42
Issue
1-3
Year of publication
1996
Pages
153 - 156
Database
ISI
SICI code
0921-5107(1996)42:1-3<153:LCOLSL>2.0.ZU;2-J
Abstract
Silicon layers ale deposited by liquid phase epitaxy (LPE) and the tra nsfer of defects and impurities from the substrate to the layer during the deposition is investigated when multicrystalline Si substrates ar e used. Silicon layers are grown from indium solution in a slider boat apparatus; the maximum layer thickness is 20 mu m. The layers and the substrate are characterized by means of the light beam induced curren t mapping technique (LBIC) at different wavelengths, which led to a ma p of the recombining defects and to the evaluation of their recombinat ion strength. Collecting structures are p-n junctions obtained by phos phorus diffusion at 850 degrees C for 30 min. The fit of the computed spectral variation of the internal quantum efficiency with experimenta l measurements allows the evaluation of the minority carrier diffusion length in the layer and in the substrate. It is found that the extend ed crystallographic defects of the substrate are transferred in the la yer. However, their recombination strength is less marked in the layer , probably due to a recorded impurity concentration and as a consequen ce, the effective diffusion length is higher in the grains of the laye r than in the substrate.