SPATIALLY-RESOLVED DEEP-LEVEL TRANSIENT SPECTROSCOPY USING A SCANNINGTUNNELING MICROSCOPE

Citation
K. Maeda et al., SPATIALLY-RESOLVED DEEP-LEVEL TRANSIENT SPECTROSCOPY USING A SCANNINGTUNNELING MICROSCOPE, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 127-132
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
42
Issue
1-3
Year of publication
1996
Pages
127 - 132
Database
ISI
SICI code
0921-5107(1996)42:1-3<127:SDTSUA>2.0.ZU;2-J
Abstract
A novel type of deep level transient spectroscopy (DLTS) capable of re solving the spatial distribution of deep levels in semiconducting crys tals has been invented based on scanning tunneling microscopy (STM). T he electrical contact in the conventional DLTS is replaced with the sh arp tip in STM, which is not in contact with the sample surface. The t ransient signal detected in STM-DLTS is the surface photovoltage (SPV) induced by chopped illumination of the sample with a laser light. The decay rate of SPV on termination of illumination reflects the rate of detrapping of photo-generated carriers from deep centers located bene ath the sample surface. The effectiveness of this method has been test ed for a cleaved crystal of plastically deformed n-GaAs.