FRICTION FORCE MICROSCOPY CHARACTERIZATION OF SEMICONDUCTOR HETEROSTRUCTURES

Authors
Citation
J. Tamayo et R. Garcia, FRICTION FORCE MICROSCOPY CHARACTERIZATION OF SEMICONDUCTOR HETEROSTRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 122-126
Citations number
23
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
42
Issue
1-3
Year of publication
1996
Pages
122 - 126
Database
ISI
SICI code
0921-5107(1996)42:1-3<122:FFMCOS>2.0.ZU;2-1
Abstract
Measurement of frictional forces in a scanning force microscopy has be en applied to perform compositional characterization of semiconductor heterostructures. Semiconductor interfaces as well as multiquantum wel ls are resolved with 3 nm of spatial resolution. The chemical sensitiv ity of this method is studied by imaging a step graded InxGa1-xAs samp le. Changes of 10% in indium (or gallium) composition are detected. Th ese results point out the potential of friction force microscopy for s imultaneous topography and compositional characterization of semicondu ctor materials.