THEORETICAL ASPECTS OF THE MINORITY-CARRIER RECOMBINATION AT DISLOCATIONS IN SEMICONDUCTORS

Authors
Citation
Jl. Farvacque, THEORETICAL ASPECTS OF THE MINORITY-CARRIER RECOMBINATION AT DISLOCATIONS IN SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 110-121
Citations number
22
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
42
Issue
1-3
Year of publication
1996
Pages
110 - 121
Database
ISI
SICI code
0921-5107(1996)42:1-3<110:TAOTMR>2.0.ZU;2-X
Abstract
Starting from the master equation, a diffusion equation for minority c arriers in the position and energy space is first deduced. A further i ntegration over the energy variable leads then to the definition of th e recombination rate associated with any kind of defect. Applied to th e particular case of dislocations, it is shown that the recombination process is made of various steps which, in first approximation occur i n series: a cascade capture of the electrons and holes along the shall ow dislocation states, locked by a transition between the ground state s of these energy levels. We then show that for GaAs the step controll ing the whole recombination process is connected with the Lax capture while for indirect gap semiconductors it should be much more controlle d by the dislocation interband transitions. Self-consistent determinat ion of the recombination is then numerically performed in the case of GaAs. We show that intrinsic EBIC contrasts may be experimentally obse rvable and we show that this model may also be applied for the calcula tion of extrinsic dislocation EBIC contrasts.