DEPOSITION PARAMETERS AND SURFACE-TOPOGRAPHY OF A-SI-H THIN-FILMS OBTAINED BY THE RF GLOW-DISCHARGE PROCESS

Citation
J. Ebothe et al., DEPOSITION PARAMETERS AND SURFACE-TOPOGRAPHY OF A-SI-H THIN-FILMS OBTAINED BY THE RF GLOW-DISCHARGE PROCESS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 105-109
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
42
Issue
1-3
Year of publication
1996
Pages
105 - 109
Database
ISI
SICI code
0921-5107(1996)42:1-3<105:DPASOA>2.0.ZU;2-V
Abstract
The surface topography of glow discharge aSi:H thin films has been stu died here through the evaluation of the related statistical characteri stics which are: the root mean square roughness (sigma) and the autoco variance length (Lc). It is shown that some factors of the film deposi tion process greatly affect their respective values, modifying the fil m surface morphology. An high deposition rate (r), increases markedly both sigma and Lc while an increase of the substrate temperature (T-s) leads to a reduction of their respective values. The use of an high i on bombardment in the plasma during the deposition process further red uces sigma but leads to a noticeable increase of Lc.