MODELING ELECTROSTATIC SCANNING FORCE MICROSCOPY OF SEMICONDUCTORS

Authors
Citation
C. Donolato, MODELING ELECTROSTATIC SCANNING FORCE MICROSCOPY OF SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 99-104
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
42
Issue
1-3
Year of publication
1996
Pages
99 - 104
Database
ISI
SICI code
0921-5107(1996)42:1-3<99:MESFMO>2.0.ZU;2-I
Abstract
A model is presented for the electrostatic interaction between the tip of a scanning force microscope and the surface of a semiconductor in condition of depletion. By representing the tip as a conducting sphere and suitably approximating the semiconductor space-charge region, ana lytical expressions are derived for the boundary of this region and th e tip-sample capacitance and force. Operation in an immersion medium w ith high dielectric constant is found to enhance the doping sensitivit y of the electrostatic force. As a function of the tip-sample distance , this force exhibits a zero point, if the permittivity of the immersi on medium exceeds that of the semiconductor.