TEMPERATURE-DEPENDENT EBIC AND DEEP-LEVEL TRANSIENT SPECTROSCOPY INVESTIGATION OF DIFFERENT TYPES OF MISFIT-DISLOCATIONS AT MOVPE GROWN GAAS INGAAS/GAAS-SINGLE-QUANTUM WELLS/

Citation
L. Panepinto et al., TEMPERATURE-DEPENDENT EBIC AND DEEP-LEVEL TRANSIENT SPECTROSCOPY INVESTIGATION OF DIFFERENT TYPES OF MISFIT-DISLOCATIONS AT MOVPE GROWN GAAS INGAAS/GAAS-SINGLE-QUANTUM WELLS/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 77-81
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
42
Issue
1-3
Year of publication
1996
Pages
77 - 81
Database
ISI
SICI code
0921-5107(1996)42:1-3<77:TEADTS>2.0.ZU;2-O
Abstract
Using deep level transient spectroscopy (DLTS) a trap correlated to mi sfit dislocations in GaAs/InGaAs/GaAs heterostructures is observed. Th e characteristics fit well previous findings of a dislocation correlat ed defect in plastically deformed GaAs. Using recently developed crite ria to distinguish deep bandlike and localized states by means of DLTS this level is shown to originate from point defects at or very close to the dislocation core. The temperature dependence of electron beam i nduced current contrast of alpha- and beta-misfit dislocations has als o been measured on the same dislocations.