A REVIEW OF ION-BEAM-INDUCED CHARGE MICROSCOPY FOR INTEGRATED-CIRCUITANALYSIS

Authors
Citation
Mbh. Breese, A REVIEW OF ION-BEAM-INDUCED CHARGE MICROSCOPY FOR INTEGRATED-CIRCUITANALYSIS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 67-76
Citations number
38
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
42
Issue
1-3
Year of publication
1996
Pages
67 - 76
Database
ISI
SICI code
0921-5107(1996)42:1-3<67:AROICM>2.0.ZU;2-D
Abstract
The ion beam induced charge (IBIC) microscopy technique has recently b een developed as a means of imaging the depletion regions of working m icroelectronic devices beneath their thick metallisation and passivati on layers. IBIC microscopy is analogous to electron beam induced curre nt microscopy but has the advantages of a larger analytical depth, low er lateral scattering of the incident focused MeV ion beam and negligi ble charging effects. These characteristics enable IBIC to image small , buried active device regions without the need to remove the surface layers prior to analysis. The basis of this new technique is outlined and the applications for integrated circuit analysis, characterising u pset mechanisms, and for imaging dislocation networks in semiconductor wafers are reviewed.