BEHAVIOR OF AN AMPHOTERIC DEFECT UNDER STANDARD DLTS AND BEAM INJECTION DLTS, RESPECTIVELY

Citation
K. Knobloch et H. Alexander, BEHAVIOR OF AN AMPHOTERIC DEFECT UNDER STANDARD DLTS AND BEAM INJECTION DLTS, RESPECTIVELY, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 63-66
Citations number
7
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
42
Issue
1-3
Year of publication
1996
Pages
63 - 66
Database
ISI
SICI code
0921-5107(1996)42:1-3<63:BOAADU>2.0.ZU;2-1
Abstract
The temperature dependence of one of the prominent DLTS lines of plast ically deformed n-type silicon indicates trapping of both electrons an d holes. An algorithm for analysis of such cases is proposed which doe s not require exponential transients. In this way the position of the D trap in the gap and its capture cross sections for electrons and hol es are redetermined. Its density in standard deformed crystals is cons iderably higher than assumed before. Beam injection DLTS reveals a pur e electron trap with the same parameters Delta E and sigma(n) as deter mined for the amphoteric trap in the first part. Trapping of holes und er beam injection possibly is obscured by nearby shallow hole traps.