EFFECT OF HYDROGENATION ON THE PROPERTIES OF EXTENDED DEFECTS IN SEMICONDUCTORS

Citation
A. Zozime et J. Castaing, EFFECT OF HYDROGENATION ON THE PROPERTIES OF EXTENDED DEFECTS IN SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 57-62
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
42
Issue
1-3
Year of publication
1996
Pages
57 - 62
Database
ISI
SICI code
0921-5107(1996)42:1-3<57:EOHOTP>2.0.ZU;2-L
Abstract
Hydrogen is introduced in semiconductors in order to improve their ele ctronic properties. It can also be present in many cases as a result o f material preparation. We first briefly review the various means and mechanisms of introduction of hydrogen, and its influence on the shall ow levels. Assessment of the electrical properties of extended defects is reviewed, with a special emphasis on the beam injection techniques . It is shown how hydrogenation can passivate the electrical activity of deep levels associated to grain boundaries, dislocations, surfaces or interfaces, in crystalline semiconductors. The issues of the therma l stability of the hydrogen in the samples as well as that of the prev ention against surface damage during hydrogen treatments are discussed .