E-BEAM TOMOGRAPHY OF PLANAR SEMICONDUCTOR STRUCTURES

Authors
Citation
Ei. Rau et Eb. Yakimov, E-BEAM TOMOGRAPHY OF PLANAR SEMICONDUCTOR STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 52-56
Citations number
32
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
42
Issue
1-3
Year of publication
1996
Pages
52 - 56
Database
ISI
SICI code
0921-5107(1996)42:1-3<52:ETOPSS>2.0.ZU;2-U
Abstract
The 'apparatus' approach to the realization of e-beam layer-by-layer t omography in which the reconstruction of internal structure and physic al properties depth distribution is achieved by means of specially des igned set-up has been discussed. It is shown that the backscattering e lectron mode with a variation primary electron energy or using energy dispersive detection, and modulated electron beam induced curl ent and cathodoluminescence modes can be used as the 'apparatus' tomography m ethods for nondestructive characterization of multilayer planar struct ures. The depth resolution of these methods achieve 10 nm.