CONVENTIONAL EBIC VERSUS MOS EBIC STUDY OF ELECTRICALLY ACTIVE DEFECTS IN SI AND SOI/

Citation
I. Bondarenko et al., CONVENTIONAL EBIC VERSUS MOS EBIC STUDY OF ELECTRICALLY ACTIVE DEFECTS IN SI AND SOI/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 32-37
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
42
Issue
1-3
Year of publication
1996
Pages
32 - 37
Database
ISI
SICI code
0921-5107(1996)42:1-3<32:CEVMES>2.0.ZU;2-P
Abstract
An electron beam induced current in metal-oxide-semiconductor capacito rs (MOS/EBIC) investigation of the defects in silicon on insulator (SO I) wafers and oxidation induced stacking faults in CZ-S1 is presented. Some advantages of the method over conventional Schottky diode EBIC h ave been demonstrated. MOS/EBIC is shown to delineate defects which ar e shallower than the space charge region of Schottky diodes and not de tectable using conventional EBIC. In addition, the MOS/EBIC technique is capable of separating bulk, interfacial and oxide defects in the MO S structures. Using the MOS/EBIC technique, electrically active defect s below the buried oxide in SOI wafers were observed for the first tim e. The local properties of thermal oxides grown in different oxidation conditions were studied by MOS/EBIC. It was found that during reoxida tion induced stacking faults produce defects in growing oxide which ca use enhanced oxide current sites.