I. Bondarenko et al., CONVENTIONAL EBIC VERSUS MOS EBIC STUDY OF ELECTRICALLY ACTIVE DEFECTS IN SI AND SOI/, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 32-37
An electron beam induced current in metal-oxide-semiconductor capacito
rs (MOS/EBIC) investigation of the defects in silicon on insulator (SO
I) wafers and oxidation induced stacking faults in CZ-S1 is presented.
Some advantages of the method over conventional Schottky diode EBIC h
ave been demonstrated. MOS/EBIC is shown to delineate defects which ar
e shallower than the space charge region of Schottky diodes and not de
tectable using conventional EBIC. In addition, the MOS/EBIC technique
is capable of separating bulk, interfacial and oxide defects in the MO
S structures. Using the MOS/EBIC technique, electrically active defect
s below the buried oxide in SOI wafers were observed for the first tim
e. The local properties of thermal oxides grown in different oxidation
conditions were studied by MOS/EBIC. It was found that during reoxida
tion induced stacking faults produce defects in growing oxide which ca
use enhanced oxide current sites.