INVESTIGATION OF THE LOW-TEMPERATURE CL CONTRASTS OF DISLOCATIONS IN COMPOUND SEMICONDUCTORS

Citation
J. Schreiber et al., INVESTIGATION OF THE LOW-TEMPERATURE CL CONTRASTS OF DISLOCATIONS IN COMPOUND SEMICONDUCTORS, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 24-31
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
42
Issue
1-3
Year of publication
1996
Pages
24 - 31
Database
ISI
SICI code
0921-5107(1996)42:1-3<24:IOTLCC>2.0.ZU;2-8
Abstract
Quantitative cathodoluminescence (CL) defect contrast studies were per formed at single grown-in and isolated glide dislocations in (001) GaP , (001) GaAs and (111) CdTe samples for temperatures T = 300-5 K. Bark and bright CL defect contrasts observed in the low temperature range exhibit thermally activated behavior or show thermal quenching, Analyz ing the contrast temperature dependence taking into account temperatur e-dependent matrix parameters allows to evidence temperature-induced c hanges of the recombination activity of the dislocations concerned. Th e results obtained for the misfit defects in GaP and As(g) dislocation s in GaAs proved in both cases non-radiative thermally activated defec t-bound recombination rates. The bright CL contrasts correlated with t he Te(g) line segments of glide dislocations in CdTe point out defect- bound radiative recombination. Its photon energy peak is at 1.48 eV (5 K), the emission intensity is quenched above T greater than or equal to 120 K, from what a defect-bound excitonic process might be conclude d. Despite the distinct contrast behaviors a qualitatively similar ris e of the defect recombination strength with increasing temperature is deduced for the structurally different dislocations studied.