EBIC DEFECT CHARACTERIZATION - STATE OF UNDERSTANDING AND PROBLEMS OFINTERPRETATION

Citation
M. Kittler et W. Seifert, EBIC DEFECT CHARACTERIZATION - STATE OF UNDERSTANDING AND PROBLEMS OFINTERPRETATION, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 8-13
Citations number
37
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
42
Issue
1-3
Year of publication
1996
Pages
8 - 13
Database
ISI
SICI code
0921-5107(1996)42:1-3<8:EDC-SO>2.0.ZU;2-T
Abstract
Phenomenological modelling of EBIC defect contrast can be sufficiently realised nowadays, with defects assumed as regions of recombination l ifetime different from that in the surrounding material. The mechanism s of carrier recombination of the defect sites are still under discuss ion. Both the charge-controlled recombination model and the Shockley-R ead-Hall model allow one to describe experimental defect contrast data recorded as function of temperature or beam injection, respectively, and to yield a kind of spectroscopic information. However, these exper imental data seem to be insufficient to provide an unambiguous descrip tion of the defects. Among future experiments that might help to overc ome the present difficulties, we suggest extraction of complementary i nformation on defect charging and estimation of the extension of the a ctive defect region from the width of the EBIC contrast profile.