CHARACTERIZATION OF SEMICONDUCTOR-LASER DIODES BY BEAM INJECTION TECHNIQUES

Authors
Citation
A. Jakubowicz, CHARACTERIZATION OF SEMICONDUCTOR-LASER DIODES BY BEAM INJECTION TECHNIQUES, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 1-7
Citations number
27
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
42
Issue
1-3
Year of publication
1996
Pages
1 - 7
Database
ISI
SICI code
0921-5107(1996)42:1-3<1:COSDBB>2.0.ZU;2-3
Abstract
This paper illustrates the application of microscopy techniques to add ress material, processing, and device-related issues encountered in th e development of laser diodes. General comments are made concerning lo cal characterization of laser diodes, and issues related to laser reli ability are addressed. An extensive investigation is presented, showin g how microscopy techniques can facilitate the building of modern devi ces. The examples cited include recent data published by various autho rs as well as the author's own work on quantum well ridge-type InGaP/A lGaInP/AlGaAs red emitting lasers, GaAs/AlGaAs lasers, strained InGaAs /AlGaAs 980 nm lasers, and GaAs/AlGaAs lasers with dry-etched mirrors.