Lr. Allen et al., SELECTIVE DRY-ETCHING OF OXIDE-FILMS FOR SPACER APPLICATIONS IN A HIGH-DENSITY PLASMA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3470-3472
The use of a high density plasma to etch oxide side wall spacers was i
nvestigated. Process trends and the optimum process conditions require
d were determined. Oxide and polysilicon etch rates, uniformities, and
the selectivity of oxide to polysilicon were all measured. The result
ing etch chemistry had an oxide etch rate of 350 nm/min with a selecti
vity of oxide to polysilicon of 30:1. (C) 1996 American Vacuum Society
.