SELECTIVE DRY-ETCHING OF OXIDE-FILMS FOR SPACER APPLICATIONS IN A HIGH-DENSITY PLASMA

Citation
Lr. Allen et al., SELECTIVE DRY-ETCHING OF OXIDE-FILMS FOR SPACER APPLICATIONS IN A HIGH-DENSITY PLASMA, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3470-3472
Citations number
1
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
ISSN journal
1071-1023
Volume
14
Issue
6
Year of publication
1996
Pages
3470 - 3472
Database
ISI
SICI code
1071-1023(1996)14:6<3470:SDOOFS>2.0.ZU;2-O
Abstract
The use of a high density plasma to etch oxide side wall spacers was i nvestigated. Process trends and the optimum process conditions require d were determined. Oxide and polysilicon etch rates, uniformities, and the selectivity of oxide to polysilicon were all measured. The result ing etch chemistry had an oxide etch rate of 350 nm/min with a selecti vity of oxide to polysilicon of 30:1. (C) 1996 American Vacuum Society .