Cc. Umbach et al., CHARACTERIZATION OF LARGE-AREA ARRAYS OF NANOSCALE SI TIPS FABRICATEDUSING THERMAL-OXIDATION AND WET ETCHING OF SI PILLARS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3420-3424
Two-dimensional periodic arrays containing 10(8) Si pillars with heigh
ts of 600-700 nm, widths of 100 nm, and repeat spacings of 300 nm have
been fabricated using electron beam lithography on Si(001) substrates
. These pillars have subsequently undergone wet oxidation at 800 degre
es C and etching in hydrofluoric acid to produce an array of sharp tip
s with a height of similar to 4000 Angstrom. The x-ray diffraction fro
m this array appears to be dominated by scattering from the bases of t
he tips. Correlated variations in tip shape, observed with scanning el
ectron microscopy, produce a modulated diffuse background in the diffr
acted x-ray intensity. These observations demonstrate the feasibility
of using high-resolution x-ray diffraction for studying defects in lar
ge-area arrays of periodic structures. (C) 1996 American Vacuum Societ
y.