CHARACTERIZATION OF LARGE-AREA ARRAYS OF NANOSCALE SI TIPS FABRICATEDUSING THERMAL-OXIDATION AND WET ETCHING OF SI PILLARS

Citation
Cc. Umbach et al., CHARACTERIZATION OF LARGE-AREA ARRAYS OF NANOSCALE SI TIPS FABRICATEDUSING THERMAL-OXIDATION AND WET ETCHING OF SI PILLARS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(6), 1996, pp. 3420-3424
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
ISSN journal
1071-1023
Volume
14
Issue
6
Year of publication
1996
Pages
3420 - 3424
Database
ISI
SICI code
1071-1023(1996)14:6<3420:COLAON>2.0.ZU;2-#
Abstract
Two-dimensional periodic arrays containing 10(8) Si pillars with heigh ts of 600-700 nm, widths of 100 nm, and repeat spacings of 300 nm have been fabricated using electron beam lithography on Si(001) substrates . These pillars have subsequently undergone wet oxidation at 800 degre es C and etching in hydrofluoric acid to produce an array of sharp tip s with a height of similar to 4000 Angstrom. The x-ray diffraction fro m this array appears to be dominated by scattering from the bases of t he tips. Correlated variations in tip shape, observed with scanning el ectron microscopy, produce a modulated diffuse background in the diffr acted x-ray intensity. These observations demonstrate the feasibility of using high-resolution x-ray diffraction for studying defects in lar ge-area arrays of periodic structures. (C) 1996 American Vacuum Societ y.