RELIABILITY INVESTIGATION OF INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/

Citation
Sr. Bahl et al., RELIABILITY INVESTIGATION OF INGAP GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS/, IEEE electron device letters, 17(9), 1996, pp. 446-448
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
0741-3106
Volume
17
Issue
9
Year of publication
1996
Pages
446 - 448
Database
ISI
SICI code
0741-3106(1996)17:9<446:RIOIGH>2.0.ZU;2-W
Abstract
During elevated-temperature bias stress, InGaP/GaAs HBT's grown by MOC VD show a medium term degradation in current gain of about 20%, with a n activation energy of 0.64 eV. They also show a corresponding decreas e in base resistance and an increase in turn-on voltage. InGaP/GaAs HB T's grown by GSMBE, however, do not show this degradation. SIMS measur ements show a five times greater than GSMBE-epi hydrogen concentration of about 10(19) cm(-3) in the base layer of the MOCVD-grown epi. The degradation can be explained by acceptor depassivation due to hydrogen out-diffusion from the epi during stress.