PATH-INTEGRAL APPROACH IN THE CALCULATION OF THE ELECTRON-DENSITY OF STATES AT THE SEMICONDUCTOR-INSULATOR INTERFACE

Citation
G. Slavcheva et I. Yanchev, PATH-INTEGRAL APPROACH IN THE CALCULATION OF THE ELECTRON-DENSITY OF STATES AT THE SEMICONDUCTOR-INSULATOR INTERFACE, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 74(6), 1996, pp. 715-732
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied",Mechanics,"Physics, Condensed Matter","Material Science
ISSN journal
1364-2812
Volume
74
Issue
6
Year of publication
1996
Pages
715 - 732
Database
ISI
SICI code
1364-2812(1996)74:6<715:PAITCO>2.0.ZU;2-Y
Abstract
The electron density of states near the semiconductor-insulator interf ace is calculated using the Feynman's path-integral method. Statistica l interface charge distribution properties have been taken into accoun t and the Fourier transform of the binary correlation function of the random potential has been computed. Finally the electron density of st ates in the band tail in a first cumulant approximation is obtained. T he exponential dependence of the density of states on the energy is si milar to that obtained for the three-dimensional screened Coulomb pote ntial at a limit of weak screening. The exponent b(v) of the density o f states is the same and the pre-exponential factor a(v) are approxima tely two orders of magnitude smaller than those obtained using the scr eened Coulomb model random potential. Some numerical results have been presented for the system Si-SiO2.