COMPARISON OF PASSIVATION FILMS - THE EFFECT OF THERMAL CYCLES AND COMPARISON OF PHOSPHORUS-DOPED OXIDE-FILMS

Citation
Tht. Wu et al., COMPARISON OF PASSIVATION FILMS - THE EFFECT OF THERMAL CYCLES AND COMPARISON OF PHOSPHORUS-DOPED OXIDE-FILMS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2090-2095
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
ISSN journal
1071-1023
Volume
11
Issue
6
Year of publication
1993
Pages
2090 - 2095
Database
ISI
SICI code
1071-1023(1993)11:6<2090:COPF-T>2.0.ZU;2-M
Abstract
Choosing the correct passivation film can be a complicated task. Facto rs such as sidewall integrity, sodium penetrability, and ability to wi thstand postpassivation temperature cycles must be considered. Previou s studies have defined standard techniques for testing sidewall integr ity and sodium barrier ability. In this study, the effect of thermal c ycle exposure on the sidewall integrity of plasma enhanced chemical va por deposition (PECVD) passivation films (TEOS-based oxide, oxynitride , and nitride) by varying factors such as film type, metal sputter tem perature, and film stress was examined. It will be shown that metal sp utter temperature and film stress are much more important than film ty pe. In addition, the newer generation of TEOS-based phosphorous-doped passivation films was compared to the standard, silane-based phosphosi licate glass which is deposited using atmospheric pressure chemical va por deposition (APCVD). The conclusion is that APCVD films are slightl y better as deposited, but degrade during temperature cycles. The newe r TEOS-based PECVD films, however, are not affected by temperature cyc ling.