MECHANISMS OF COPPER REMOVAL DURING CHEMICAL-MECHANICAL POLISHING

Citation
Jm. Steigerwald et al., MECHANISMS OF COPPER REMOVAL DURING CHEMICAL-MECHANICAL POLISHING, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2215-2218
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
ISSN journal
1071-1023
Volume
13
Issue
6
Year of publication
1995
Pages
2215 - 2218
Database
ISI
SICI code
1071-1023(1995)13:6<2215:MOCRDC>2.0.ZU;2-Z
Abstract
Schemes using chemical mechanical polishing of copper have been propos ed for the patterning of interconnections in copper multilevel metalli zation. In this article, the phenomena involved in the removal of copp er during copper chemical mechanical polishing are investigated. The c oncentration of chemical etchant in the polish slurry is varied to inv estigate the chemical component, and the applied pressure is varied to investigate the mechanical component. Two slurries, an ammonium hydro xide plus ferricyanide slurry and a nitric acid slurry, are used to po lish both copper and Cu2O thin films. Removal of copper or Cu2O is hyp othesized to be a result of mechanical abrasion, while the role of the chemical etchant is to dissolve the material abraded from the surface rather than to etch the material directly from the surface. (C) 1995 American Vacuum Society.