NOVEL HIGH-TEMPERATURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION VERTICAL ROTATING-DISK REACTOR WITH MULTIZONE HEATING FOR GAN AND RELATED MATERIALS

Citation
R. Walker et al., NOVEL HIGH-TEMPERATURE METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION VERTICAL ROTATING-DISK REACTOR WITH MULTIZONE HEATING FOR GAN AND RELATED MATERIALS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 97-101
Citations number
8
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
35
Issue
1-3
Year of publication
1995
Pages
97 - 101
Database
ISI
SICI code
0921-5107(1995)35:1-3<97:NHMCV>2.0.ZU;2-O
Abstract
In the past several years developments in epitaxial growth of GaN have made this material viable for device applications such as UV and blue -light-emitting diodes and short-wavelength lasers in optical memory. At the same time, metal organic vapor-phase epitaxial growth of GaN pr esents several technical challenges including high growth temperatures (in the range of 1100 degrees C), a small process parameter window, a nd strict requirements for highly uniform flow and temperature distrib ution over the area of deposition. Finite element analysis thermal mod eling in combination with a novel experimental technique for real-time thermal mapping of the rotating wafer under actual deposition paramet ers was used for the development of a multizone heating system that pr ovided temperature uniformity better than 3.3 degrees C for a 50 mm wa fer at a deposition temperature of 1050 degrees C. Computational flow modeling was also used during design optimization. High flow and tempe rature uniformity provided by a new metal organic vapor-phase epitaxy rotating-disk reactor allowed us to deposit GaN films with very good s urface morphology (roughness less than 100 Angstrom) and with thicknes s uniformity to less than 2% across 50 mm wafers.