NEW HOLE NEGATIVE DIFFERENTIAL RESISTANCE STRAINED-LAYER DEVICE

Authors
Citation
Hy. Sheng et Sj. Chua, NEW HOLE NEGATIVE DIFFERENTIAL RESISTANCE STRAINED-LAYER DEVICE, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 87-89
Citations number
4
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
35
Issue
1-3
Year of publication
1995
Pages
87 - 89
Database
ISI
SICI code
0921-5107(1995)35:1-3<87:NHNDRS>2.0.ZU;2-0
Abstract
A new negative differential resistance device making use of hole trans port was developed and studied theoretically. The device consists of a n InGaAs strained-layer quantum well, an AlGaAs barrier and a GaAs qua ntum well. The real space transfer phenomenon occurs in the GaAs and I nGaAs quantum wells. For heterolayer transport, the distribution funct ion which is calculated from the wavefunction of the hole can be used to describe the transport phenomena of the particles. The current of t he device is controlled by the distribution function. The peak-to-vall ey current ratio is determined by the ratio of the effective masses of holes in the normal and strained quantum wells and the hole transmiss ion coefficient.