IV-VI COMPOSITIONAL MQWS AND SLS FOR OPTOELECTRONIC APPLICATIONS

Citation
Vv. Tetyorkin et al., IV-VI COMPOSITIONAL MQWS AND SLS FOR OPTOELECTRONIC APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 76-79
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
35
Issue
1-3
Year of publication
1995
Pages
76 - 79
Database
ISI
SICI code
0921-5107(1995)35:1-3<76:ICMASF>2.0.ZU;2-Z
Abstract
Optical, photoelectrical and electrical properties of narrow-gap PbTe- PbSnTe multiple quantum wells (MQWs) were investigated. Evidence is pr esented that such MQSs are type I structures with the thickness of the wells d = 300-900 nm Quasi-2D behavior of the carriers was observed. Photosensitivity of the MQWs was observed up to room temperature.