Optical, photoelectrical and electrical properties of narrow-gap PbTe-
PbSnTe multiple quantum wells (MQWs) were investigated. Evidence is pr
esented that such MQSs are type I structures with the thickness of the
wells d = 300-900 nm Quasi-2D behavior of the carriers was observed.
Photosensitivity of the MQWs was observed up to room temperature.