SATURATION OF THE NONLINEAR ABSORPTION IN N-I-P-I MULTIPLE-QUANTUM-WELL STRUCTURES

Authors
Citation
Xh. Tang et Cs. Jin, SATURATION OF THE NONLINEAR ABSORPTION IN N-I-P-I MULTIPLE-QUANTUM-WELL STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 72-75
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
35
Issue
1-3
Year of publication
1995
Pages
72 - 75
Database
ISI
SICI code
0921-5107(1995)35:1-3<72:SOTNAI>2.0.ZU;2-U
Abstract
A theoretical model to simulate the non-linear optical processes in n- i-p-i multiple quantum well (MQW) structures is presented. Using this model, the non-linear optical absorption modulation of the n-i-p-i MQW structure was studied. It was found that the large change in absorpti on across the intrinsic layer at low light intensity is due to the lar ge asymmetry of the ratio of the excited carrier transit time to its l ifetime of 5 x 10(-2). The ratio tau(0) tau(exp) of excess carrier lif etime at zero illumination intensity and at 10 mW cm(-2) is found to b e about 1.56 x 10(4). Saturation in the absorption at a light intensit y of 10 mW cm(-2) is due to the fact that the energy at the bottom of the quantum well is below the conduction band edge of the doped layers .