TEMPERATURE-DEPENDENCE OF LUMINESCENCE IN ZNSE

Citation
K. Yoshino et al., TEMPERATURE-DEPENDENCE OF LUMINESCENCE IN ZNSE, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 68-71
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
35
Issue
1-3
Year of publication
1995
Pages
68 - 71
Database
ISI
SICI code
0921-5107(1995)35:1-3<68:TOLIZ>2.0.ZU;2-L
Abstract
As-grown ZnSe and RbCl- and CsCl-doped ZnSe single crystals are grown by a sublimination method. The temperature dependence of the photolumi nescence (PL) spectra in the blue emission region is measured from 4.2 K to 300 K. The emission band is observed in RbCl- and CsCl-doped ZnS e from 4.2 K to 300 K. In as-grown and Zn-annealed ZnSe, the emission band undergoes considerable attenuation at 100 K. However, the emissio n band is clearly observed in Se-annealed ZnSe up to near room tempera ture. These results prove that the disappearance of Se vacancies enhan ces room temperature PL.