Hydride vapor phase epitaxy was used to selectively regrow semi-insula
ting InP:Fe over different InP-based laser mesa structures containing
layers of the InAlGaAs material system with Al mol fractions up to 0.4
8. Although stable Al-containing oxides inhibit the direct epitaxial d
eposition on the InAlGaAs layer surfaces with high Al contents, the hy
dride regrowth resulted in voidfree and complete embeddings. The embed
ding process is presented and the regrowth was proved to be successful
by very high speed laser diode operation.