HYBRIDE - VPE EMBEDDING OF INALGAAS LASER STRUCTURES WITH SI INP-FE

Citation
R. Gobel et al., HYBRIDE - VPE EMBEDDING OF INALGAAS LASER STRUCTURES WITH SI INP-FE, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 59-63
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
35
Issue
1-3
Year of publication
1995
Pages
59 - 63
Database
ISI
SICI code
0921-5107(1995)35:1-3<59:H-VEOI>2.0.ZU;2-F
Abstract
Hydride vapor phase epitaxy was used to selectively regrow semi-insula ting InP:Fe over different InP-based laser mesa structures containing layers of the InAlGaAs material system with Al mol fractions up to 0.4 8. Although stable Al-containing oxides inhibit the direct epitaxial d eposition on the InAlGaAs layer surfaces with high Al contents, the hy dride regrowth resulted in voidfree and complete embeddings. The embed ding process is presented and the regrowth was proved to be successful by very high speed laser diode operation.