REACTIVE ION ETCHED QUANTUM-WIRE STRUCTURES FOR LASER APPLICATIONS

Citation
Sa. Gurevich et al., REACTIVE ION ETCHED QUANTUM-WIRE STRUCTURES FOR LASER APPLICATIONS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 47-50
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
35
Issue
1-3
Year of publication
1995
Pages
47 - 50
Database
ISI
SICI code
0921-5107(1995)35:1-3<47:RIEQSF>2.0.ZU;2-D
Abstract
This work presents the results of an investigation of the properties o f high quality InGaAs-GaAs strained quantum well wire (QWW) structures fabricated by means of the optimized reactive ion etching technique f ollowed by special sample treatment and metallorganic chemical vapor d eposition overgrowth. Both photoluminescence (PL) and electroluminesce nce features were studied. The one-dimensional nature of electron-hole gas in fabricated QWWs was proved by the observation of blue shift an d polarization anisotropy of PL emission lines. High efficiency of QWW luminescence was demonstrated by comparison of integrated PL intensit y of QWWs with that of an unpatterned reference quantum well sample. T he electro-optical properties of QWW laser structures was found to be strongly dependent on the carrier capture process, which, in turn, is determined to a great extent by the quality of the regrowth interface.