We have studied the room temperature (RT) photoluminescence (PL) in a
series of InGaAs-GaAs structures grown on (111)B GaAs substrates. Unli
ke conventional (100) grown multi-quantum well (MQW) p-i-n structures,
the RT PL peak position and lineshape in (111)B grown structures are
determined by details of the barrier width, intrinsic region thickness
and number of wells. The PL is also found to be extremely sensitive t
o excitation power, making interpretation of the results complicated.