PHOTOLUMINESCENCE OF PIEZOELECTRIC STRAINED INGAAS-GAAS MULTIQUANTUM-WELL P-I-N STRUCTURES

Citation
Jpr. David et al., PHOTOLUMINESCENCE OF PIEZOELECTRIC STRAINED INGAAS-GAAS MULTIQUANTUM-WELL P-I-N STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 42-46
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
35
Issue
1-3
Year of publication
1995
Pages
42 - 46
Database
ISI
SICI code
0921-5107(1995)35:1-3<42:POPSIM>2.0.ZU;2-B
Abstract
We have studied the room temperature (RT) photoluminescence (PL) in a series of InGaAs-GaAs structures grown on (111)B GaAs substrates. Unli ke conventional (100) grown multi-quantum well (MQW) p-i-n structures, the RT PL peak position and lineshape in (111)B grown structures are determined by details of the barrier width, intrinsic region thickness and number of wells. The PL is also found to be extremely sensitive t o excitation power, making interpretation of the results complicated.