HIGH-POWER ALUMINUM-FREE INGAASP GAAS PUMPING DIODE-LASERS/

Citation
M. Razeghi et al., HIGH-POWER ALUMINUM-FREE INGAASP GAAS PUMPING DIODE-LASERS/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 34-41
Citations number
30
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
35
Issue
1-3
Year of publication
1995
Pages
34 - 41
Database
ISI
SICI code
0921-5107(1995)35:1-3<34:HAIGPD>2.0.ZU;2-E
Abstract
We have developed low pressure metal-organic chemical vapour depositio n technology for the growth of aluminium-free InGaAsP compounds lattic e-matched to GaAs substrate. High power laser diodes based on these ma terials and emitting at 808 nm and 890 nm wavelengths have been fabric ated and optimized. A threshold current density of 240 A cm(-2), diffe rential efficiency of 1.3 W A(-1), characteristic temperature as high as 350 K (for 980 nm) and output power as high as 67 W in quasi-contin uous wave mode have been obtained for the diodes with uncoated facets. The lasers have demonstrated excellent reliability (projected lifetim e in excess of 100 years) and they are suitable for a broad range of p umping applications.