BARRIER-MODULATED GAAS INGAAS QUANTUM-WELL OPTOELECTRONIC SWITCH (QWOES) PREPARED BY MOLECULAR-BEAM EPITAXY/

Citation
Kf. Yarn et al., BARRIER-MODULATED GAAS INGAAS QUANTUM-WELL OPTOELECTRONIC SWITCH (QWOES) PREPARED BY MOLECULAR-BEAM EPITAXY/, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 29-33
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
35
Issue
1-3
Year of publication
1995
Pages
29 - 33
Database
ISI
SICI code
0921-5107(1995)35:1-3<29:BGIQOS>2.0.ZU;2-0
Abstract
We demonstrate for the first time a three-terminal barrier-modulated G aAs/InGaAs quantum well optoelectronic switch (QWOES) with a heterojun ction triangular barrier exhibiting S-shaped negative differential res istance and voltage-controlled switching performance, prepared by mole cular beam epitaxy (MBE). The modulation of the internal barrier affec ts the d.c. switching behavior profoundly. A functional OR logic, empl oying two barrier-modulated QWOES connected in parallel, has been impl emented. The wavelength in this strained quantum well GaAs/InGaAs stru cture is centered from 980 nm to 1040 nm and belongs to an IR light-em itting diode (LED). The light output power saturates in the region of 73.57 mu W with an ON-state current of 250 mA.