A self-organization phenomenon of a strained InGaAs/AlGaAs system on a
GaAs(311)B substrate during metalorganic vapour-phase epitaxial growt
h is briefly described, and nanoscale confinement lasers with self-org
anized InGaAs quantum disks as active region are mentioned. Continuous
-wave operation of strained InGaAs quantum disk lasers is achieved at
room temperature. The threshold current is around 20 mA: which is cons
iderably lower than that of a reference double-quantum-well laser on a
GaAs(100) substrate grown side by side. However, the light output vs.
the driving current exhibits a pronounced tendency towards saturation
compared with that of the (100) quantum well laser.