SELF-ORGANIZED INGAAS QUANTUM DISK LASERS

Citation
J. Temmyo et al., SELF-ORGANIZED INGAAS QUANTUM DISK LASERS, Materials science & engineering. B, Solid-state materials for advanced technology, 35(1-3), 1995, pp. 7-11
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
35
Issue
1-3
Year of publication
1995
Pages
7 - 11
Database
ISI
SICI code
0921-5107(1995)35:1-3<7:SIQDL>2.0.ZU;2-#
Abstract
A self-organization phenomenon of a strained InGaAs/AlGaAs system on a GaAs(311)B substrate during metalorganic vapour-phase epitaxial growt h is briefly described, and nanoscale confinement lasers with self-org anized InGaAs quantum disks as active region are mentioned. Continuous -wave operation of strained InGaAs quantum disk lasers is achieved at room temperature. The threshold current is around 20 mA: which is cons iderably lower than that of a reference double-quantum-well laser on a GaAs(100) substrate grown side by side. However, the light output vs. the driving current exhibits a pronounced tendency towards saturation compared with that of the (100) quantum well laser.