THERMAL-DESORPTION SPECTROSCOPY STUDY OF HF DF-TREATED SI(100) SURFACES/

Citation
K. Kinoshita et I. Nishiyama, THERMAL-DESORPTION SPECTROSCOPY STUDY OF HF DF-TREATED SI(100) SURFACES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(6), 1995, pp. 2709-2714
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
ISSN journal
0734-2101
Volume
13
Issue
6
Year of publication
1995
Pages
2709 - 2714
Database
ISI
SICI code
0734-2101(1995)13:6<2709:TSSOHD>2.0.ZU;2-5
Abstract
Hydrogen (H)- and deuterium (D)-terminated Si (100) surfaces are inves tigated by thermal desorption spectroscopy (TDS). The H/D exchange rea ction, using 1.6% DE creates partially D-terminated Si surfaces from p assively H-terminated Si by using 1.6% or 49% HE The H/D exchange reac tion rate, determined from TDS intensity changes, follows natural-loga rithmic equations. The half-exchange time is 12.8 min. The 49% HF pret reated samples show rapid surface roughness changes in the initial sta ge of the 1.6% DF treatment; these changes are detected by rapid TDS H -2 intensity decreases. SiFx and F-2 peaks are detected by TDS. F/D ex change occurs on the 49% HF pretreated samples along with H/D exchange . The activation energy for deuterium termination is 8.7 kcal/mol. (C) 1995 American Vacuum Society.