K. Kinoshita et I. Nishiyama, THERMAL-DESORPTION SPECTROSCOPY STUDY OF HF DF-TREATED SI(100) SURFACES/, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(6), 1995, pp. 2709-2714
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Hydrogen (H)- and deuterium (D)-terminated Si (100) surfaces are inves
tigated by thermal desorption spectroscopy (TDS). The H/D exchange rea
ction, using 1.6% DE creates partially D-terminated Si surfaces from p
assively H-terminated Si by using 1.6% or 49% HE The H/D exchange reac
tion rate, determined from TDS intensity changes, follows natural-loga
rithmic equations. The half-exchange time is 12.8 min. The 49% HF pret
reated samples show rapid surface roughness changes in the initial sta
ge of the 1.6% DF treatment; these changes are detected by rapid TDS H
-2 intensity decreases. SiFx and F-2 peaks are detected by TDS. F/D ex
change occurs on the 49% HF pretreated samples along with H/D exchange
. The activation energy for deuterium termination is 8.7 kcal/mol. (C)
1995 American Vacuum Society.