Ch. Chung et al., IN-SITU INFRARED SPECTROSCOPIC STUDY ON THE ROLE OF SURFACE HYDRIDES AND FLUORIDES IN THE SILICON CHEMICAL-VAPOR-DEPOSITION PROCESS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(6), 1995, pp. 2698-2702
Citations number
31
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
role of surface hydrides and fluorides in the Si chemical vapor deposi
tion (CVD) process was studied by in situ Fourier transform infrared s
pectroscopy using a porous silicon film as the substrate, Hydrides pro
tect the silicon surface from oxidation until they are desorbed at 350
-400 degrees C. However, the hydrides are replaced almost completely b
y surface fluorides when SiH2F2 is used as a reactant in the CVD proce
ss at temperatures above 400 degrees C. The surface is then etched due
to a reaction between the fluorides and the surface silicon, When the
process temperature is lowered to 250 degrees C, the surface is cover
ed by both hydrides and fluorides, and a silicon film is deposited. (C
) 1995 American Vacuum Society.