LOW-TEMPERATURE EPITAXY AND TRANSIENT DIFFUSION MECHANISMS ON CU(100)

Authors
Citation
Y. Yue et al., LOW-TEMPERATURE EPITAXY AND TRANSIENT DIFFUSION MECHANISMS ON CU(100), Europhysics letters, 40(4), 1997, pp. 453-457
Citations number
22
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
ISSN journal
0295-5075
Volume
40
Issue
4
Year of publication
1997
Pages
453 - 457
Database
ISI
SICI code
0295-5075(1997)40:4<453:LEATDM>2.0.ZU;2-T
Abstract
The transient diffusion processes in low-temperature epitaxial growth for the first time have been classified and studied by using molecular -dynamics simulations with a hybrid tight-binding-like potential and t aking Cu on Cu(100) surface as an example. The observed diffraction-in tensity oscillations show that a quasi-layer-by-layer growth may take place for temperatures as loa as 100 K. Furthermore, it has been found that the impact cascade diffusion mechanism plays a noticeable role i n promoting atomic mobility and improving the smoothness of thin-film growth in the initial stage.