J. Hartmann et al., CHARACTERIZATION OF CARBON NITRIDE PRODUCED BY HIGH-CURRENT VACUUM-ARC DEPOSITION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(6), 1997, pp. 2983-2987
Citations number
19
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied","Materials Science, Coatings & Films
Carbon nitride thin films were deposited using the high-current are (H
CA) evaporation technique varying the pressure in the chamber and the
position of the samples with respect to the evaporation source. At dir
ect deposition the nitrogen content in the films measured by elastic r
ecoil detection analysis saturates at an atomic ratio of 0.18 due to c
hemical sputtering. At positions when the substrates are shaded from t
he carbon plasma by the sample holder the nitrogen content increases u
p to 48 at. %. This observation can be explained by a decreased energy
of the carbon ions, a higher arrival ratio of nitrogen to carbon ions
and the high degree of ionization using the HCA technique. Varying th
e sample position the binding character of nitrogen to carbon atoms in
the films changes from sp(3) to sp(2). When the energy of the deposit
ed particles is reduced graphitic clusters are formed in an amorphous
matrix. (C) 1997 American Vacuum Society. [S0734-2101(97)02506-2].