ELECTRON-BEAM BUNCHING WITH NONSINUSOIDAL MODULATION FIELD

Citation
Mg. Kong et al., ELECTRON-BEAM BUNCHING WITH NONSINUSOIDAL MODULATION FIELD, Optics communications, 143(4-6), 1997, pp. 301-307
Citations number
27
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Optics
Journal title
ISSN journal
0030-4018
Volume
143
Issue
4-6
Year of publication
1997
Pages
301 - 307
Database
ISI
SICI code
0030-4018(1997)143:4-6<301:EBWNMF>2.0.ZU;2-0
Abstract
Bunching electrons by means of nonsinusoidal modulation is considered for linear electron beam devices including microwave klystrons and fre e electron lasers. A simple analytical formulation is developed to stu dy the electron bunching in a nonsinusoidal bunching field for low pow er devices where space charge effects are not important. It is found t hat in general the current of the bunched electron beam depends on the derivative of the bunching field rather than the bunching field itsel f. This finding bears some important new implications for the conseque nt performance of electron beam devices. The analytical formulation is then verified with a numerical simulation. Space charge effects are a lso considered as a modification to the new formulation which leads to interesting insights to electron bunching with nonsinusoidal modulati on. (C) 1997 Elsevier Science B.V.