ENHANCED ATOMIC MOBILITY IN PULSED-LASER DEPOSITION OF CU FILMS

Citation
Y. Yue et al., ENHANCED ATOMIC MOBILITY IN PULSED-LASER DEPOSITION OF CU FILMS, Physics letters. A, 235(3), 1997, pp. 267-270
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
ISSN journal
0375-9601
Volume
235
Issue
3
Year of publication
1997
Pages
267 - 270
Database
ISI
SICI code
0375-9601(1997)235:3<267:EAMIPD>2.0.ZU;2-S
Abstract
The growth of Cu films by pulsed laser deposition (PLD) is studied wit h molecular dynamics simulations. We focus on examining the effects of high momentary deposition rate and energetic particle impact in the P LD process. Simulations show that these two factors can promote surfac e atomic mobility and lead to 2D smooth growth of films at lower subst rate temperature. These features are consistent with experiments. (C) 1997 Elsevier Science B.V.