Results: 1-25 | 26-41
Results: 1-25/41

Authors: Liu, Y Song, JF Zeng, YP Wu, B Zhang, YT Qian, Y Sun, YZ Du, GT
Citation: Y. Liu et al., High-power 1.5 mu m InGaAsP/InP strained quantum wells integrated superluminescent light source with tilted structure, JPN J A P 1, 40(6A), 2001, pp. 4009-4010

Authors: Liu, Y Xiao, XR Zeng, YP
Citation: Y. Liu et al., Electrolyte electroreflectance spectroscopy studies on the interfacial behavior of the near-surface In0.15Ga0.85As/GaAs quantum well electrode vertical bar non-aqueous electrolyte, J ELEC CHEM, 502(1-2), 2001, pp. 191-196

Authors: Gao, F Huang, CJ Huang, DD Li, JP Kong, MY Zeng, YP Li, JM Lin, LY
Citation: F. Gao et al., Increasing the photoluminescence intensity of Ge islands by chemical etching, CHIN PHYS, 10(10), 2001, pp. 966-969

Authors: Zeng, YP Jiang, DL
Citation: Yp. Zeng et Dl. Jiang, Fabrication and properties of laminated Al2O3/TiC composites, CERAM INT, 27(5), 2001, pp. 597-602

Authors: Zeng, YP Xu, CN Watanabe, T
Citation: Yp. Zeng et al., High temperature bending strength of MoSi2-TiC-1wt%C composite, J MAT SCI L, 20(15), 2001, pp. 1373-1375

Authors: Liu, Y Song, JF Zeng, YP Wu, B Zhang, YT Qian, Y Sun, YZ Du, GT
Citation: Y. Liu et al., High power 1.5 mu m InGaAsP/InP integrated superluminescent light source, CHIN PHYS L, 18(8), 2001, pp. 1074-1077

Authors: Watanabe, T Zhang, GJ Yue, XM Zeng, YP Shobu, K Bahlawane, N
Citation: T. Watanabe et al., Multilayer composites in Al2O3/MoSi2 system, MATER CH PH, 67(1-3), 2001, pp. 256-262

Authors: Liu, B Zhuang, QD Yoon, SF Dai, JH Kong, MY Zeng, YP Li, JM Lin, LY Zhang, HJ
Citation: B. Liu et al., Properties and turning of intraband optical absorption in InxGa1-xAs/GaAs self-assembled quantum dot superlattice, INT J MOD B, 15(13), 2001, pp. 1959-1968

Authors: Cao, X Zeng, YP Kong, MY Pan, L Wang, BQ Zhu, ZP
Citation: X. Cao et al., The keys to get high transconductance of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs devices, SOL ST ELEC, 45(5), 2001, pp. 751-754

Authors: Cao, X Zeng, YP Kong, MY Pan, LA Wang, BQ Zhu, ZP Wang, XG Chang, Y Chu, JH
Citation: X. Cao et al., Photoluminescence of AlGaAs/InGaAs/GaAs pseudomorphic HEMTs with differentthickness of spacer layer, J CRYST GR, 231(4), 2001, pp. 520-524

Authors: Gao, F Huang, CJ Huang, DD Li, JP Sun, DZ Kong, MY Zeng, YP Li, JM Lin, LY
Citation: F. Gao et al., Changing the size and shape of Ge island by chemical etching, J CRYST GR, 231(1-2), 2001, pp. 17-21

Authors: Cao, X Zeng, YP Cui, LJ Kong, MY Pan, LA Wang, BQ Zhu, ZP
Citation: X. Cao et al., Using photoluminescence as optimization criterion to achieve high-quality InGaAs/AlGaAs pHEMT structure, J CRYST GR, 227, 2001, pp. 127-131

Authors: Zeng, YP Cao, X Cui, LJ Kong, MY Pan, L Wang, BQ Zhu, ZP
Citation: Yp. Zeng et al., High-quality metamorphic HEMT grown on GaAs substrates by MBE, J CRYST GR, 227, 2001, pp. 210-213

Authors: Wang, JX Sun, DZ Wang, XL Li, JM Zeng, YP Hou, X Lin, LY
Citation: Jx. Wang et al., High-quality GaN grown by gas-source MBE, J CRYST GR, 227, 2001, pp. 386-389

Authors: Gao, F Lin, YX Huang, DD Li, JP Sun, DZ Kong, MY Zeng, YP Li, JM Lin, LY
Citation: F. Gao et al., Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability, J CRYST GR, 227, 2001, pp. 766-769

Authors: Gao, F Huang, DD Li, JP Kong, MY Sun, DZ Li, JM Zeng, YP Lin, LY
Citation: F. Gao et al., Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy, J CRYST GR, 223(4), 2001, pp. 489-493

Authors: Jiang, CP Huang, ZM Li, ZF Yu, J Guo, SL Lu, W Chu, JH Cui, LJ Zeng, YP Zhu, ZP Wang, BQ
Citation: Cp. Jiang et al., Longitudinal optic phonon-plasmon coupling in delta-doped metamorphic InAlAs/InGaAs high-electron-mobility transistor structures on GaAs substrates, APPL PHYS L, 79(9), 2001, pp. 1375-1377

Authors: Jiang, CP Huang, ZM Guo, SL Chu, JH Cui, LJ Zeng, YP Zhu, ZP Wang, BQ
Citation: Cp. Jiang et al., Subband electron properties of highly doped InAlAs/InGaAs metamorphic high-electron-mobility transistors on GaAs substrates, APPL PHYS L, 79(12), 2001, pp. 1909-1911

Authors: Liu, Y Xiao, XR Zeng, YP
Citation: Y. Liu et al., Photoelectrochemical behavior of a novel composite In0.15Ga0.85As/GaAs vertical bar GaAs/Al0.3Ga0.7As multiple quantum well electrode, ELECTROCH C, 2(6), 2000, pp. 404-406

Authors: Zeng, YP Lee, CS Lee, KC Mao, WM
Citation: Yp. Zeng et al., Influence of external constraint on deformation behaviour of copper singlecrystals with {112}< 111 > orientation, SCR MATER, 43(3), 2000, pp. 253-258

Authors: Wang, XG Chang, Y Gui, YS Chu, JH Cao, X Zeng, YP Kong, MY
Citation: Xg. Wang et al., Photoluminescence studies on pseudomorphic delta-doped AlGaAs/InGaAs/GaAs quantum wells, J INF M W, 19(5), 2000, pp. 333-337

Authors: Zeng, YP Jiang, DL Greil, P
Citation: Yp. Zeng et al., Tape casting of aqueous Al2O3 slurries, J EUR CERAM, 20(11), 2000, pp. 1691-1697

Authors: Gao, F Huang, DD Li, JP Lin, YX Kong, MY Li, JM Zeng, YP Lin, LY
Citation: F. Gao et al., The growth of Si/SiGe/Si structures for heterojunction bipolar transistor by gas source molecular beam epitaxy, J CRYST GR, 220(4), 2000, pp. 457-460

Authors: Wu, J Zeng, YP Sun, ZZ Lin, F Xu, B Wang, ZG
Citation: J. Wu et al., Self-assembled InAs quantum wires on InP (001) (vol 219, pg 180, 2000), J CRYST GR, 219(4), 2000, pp. 495-495

Authors: Wu, J Zeng, YP Sun, ZZ Lin, F Xu, B Wang, ZG
Citation: J. Wu et al., Self-assembled InAs quantum wires on InP(001), J CRYST GR, 219(1-2), 2000, pp. 180-183
Risultati: 1-25 | 26-41