Results: 1-22 |
Results: 22

Authors: GOSTEV AV ZHUKOV AN MOLL CH RAU EI YAKIMOV EB
Citation: Av. Gostev et al., INFORMATION ANALYZE OF ELECTRON-INDUCE EM F METHOD IN SEM, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 62(3), 1998, pp. 599-605

Authors: KOKHANCHIK LS YAKIMOV EB
Citation: Ls. Kokhanchik et Eb. Yakimov, INFLUENCE OF TEMPERATURE ON SECONDARY-ELE CTRON EMISSION SIGNAL IN PYROELECTRIC LINBO3, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 62(3), 1998, pp. 635

Authors: YAKIMOV EB
Citation: Eb. Yakimov, DISLOCATION-POINT DEFECT INTERACTION EFFECT ON LOCAL ELECTRICAL-PROPERTIES OF SEMICONDUCTORS, Journal de physique. III, 7(12), 1997, pp. 2293-2307

Authors: ZAITSEV SI YAKIMOV EB
Citation: Si. Zaitsev et Eb. Yakimov, SURFACE PROFILE EFFECT ON THE BACKSCATTER ING ELECTRON SPECTRUM, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 61(10), 1997, pp. 1954-1958

Authors: USHAKOV NG USHAKOVA AP YAKIMOV EB
Citation: Ng. Ushakov et al., DETERMINATION OF DIFFUSION LENGTH DISTRIB UTION UNDER VARIATION OF THE ACCELERATING VOLTAGE OF THE BEAM, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 61(10), 1997, pp. 1992-1998

Authors: KOKHANCHIK LS YAKIMOV EB
Citation: Ls. Kokhanchik et Eb. Yakimov, INFLUENCE OF A SUBSURFACE LAYER ON SURFACE PYROELECTRIC POTENTIAL FORMATION IN LITHIUM-NIOBATE, Ferroelectrics, 201(1-4), 1997, pp. 175-183

Authors: KONONCHUK OV FEKLISOVA OV YAKIMOV EB YARYKIN NA ORLOV VI
Citation: Ov. Kononchuk et al., FORMATION OF THE SPECTRUM OF DEEP LEVELS IN PLASTICALLY DEFORMED DURING THE EXPANSION OF DISLOCATION LOOPS, Semiconductors, 30(2), 1996, pp. 143-147

Authors: MARIANI G SIROTKIN VV PICHAUD B YAKIMOV EB ZAITSEV SI
Citation: G. Mariani et al., AN INVESTIGATION THE RATE OF SI SELF-INTERSTITIAL ANNIHILATION AT DISLOCATIONS, Journal of physics. Condensed matter, 8(31), 1996, pp. 5685-5690

Authors: RAU EI YAKIMOV EB
Citation: Ei. Rau et Eb. Yakimov, E-BEAM TOMOGRAPHY OF PLANAR SEMICONDUCTOR STRUCTURES, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 52-56

Authors: SIROTKIN VV YAKIMOV EB ZAITSEV SI
Citation: Vv. Sirotkin et al., SIMULATION OF RECOMBINATION CONTRAST OF EXTENDED DEFECTS IN THE MODULATED EBIC, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 176-180

Authors: FEKLISOVA OV YAKIMOV EB YARYKIN NA
Citation: Ov. Feklisova et al., EFFECT OF IRRADIATION IN SEM ON ELECTRICAL-PROPERTIES OF SILICON, Materials science & engineering. B, Solid-state materials for advanced technology, 42(1-3), 1996, pp. 274-276

Authors: DREOMOVA NN ZAITSEV SI KONONCKUK OV RAU EI USHAKOV NG CHUKALINA MV YAKIMOV EB
Citation: Nn. Dreomova et al., NEW PRINCIPLES OF SEMICONDUCTOR ANALYZER OF BACKSCATTERED ELECTRON-ENERGY, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 60(2), 1996, pp. 72-76

Authors: DREOMOVA NN RAU EI YAKIMOV EB
Citation: Nn. Dreomova et al., SOME ASPECTS OF SEM PROFILOMETRY IN THE B ACKSCATTERING ELECTRON MODE, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 60(2), 1996, pp. 101-104

Authors: EREMENKO VG TOLKUNOV IL YAKIMOV EB
Citation: Vg. Eremenko et al., ELECTRON-ACOUSTIC AND EBIC MICROSCOPY OF THE IMPURITY ATMOSPHERE NEARBY THE DISLOCATION SLIP PLANE IN SI, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 60(2), 1996, pp. 116-119

Authors: KOKHANCHIK LS YAKIMOV EB
Citation: Ls. Kokhanchik et Eb. Yakimov, PYROELECTRIC PROPERTIES OF LINBO3 CRYSTAL S FOLLOWING DIFFUSION TREATMENT, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 60(10), 1996, pp. 190-194

Authors: KONONCHUK OV YAKIMOV EB
Citation: Ov. Kononchuk et Eb. Yakimov, MEASUREMENTS OF HIGH DIFFUSION LENGTH BY MODULATED EBIC, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 59(2), 1995, pp. 82-86

Authors: BONDARENKO IE KONONCHUK OV YAKIMOV EB
Citation: Ie. Bondarenko et al., DEPENDENCE OF RECOMBINATION CONTRAST OF T HE DISLOCATIONS IN SILICON ON THEIR PATHWAY, Izvestia Akademii nauk SSSR. Seria fiziceskaa, 59(2), 1995, pp. 95-99

Authors: ARISTOV VV RAU EI YAKIMOV EB
Citation: Vv. Aristov et al., APPARATUS ELECTRON-BEAM MICROTOMOGRAPHY IN SEM, Physica status solidi. a, Applied research, 150(1), 1995, pp. 211-219

Authors: FEKLISOVA OV YAKIMOV EB YARYKIN NA
Citation: Ov. Feklisova et al., DEFECT FORMATION IN GOLD-DOPED SILICON IRRADIATED WITH LOW-ENERGY ELECTRONS, Semiconductors, 28(12), 1994, pp. 1201-1203

Authors: KIREEV VA RAZGONOV II YAKIMOV EB
Citation: Va. Kireev et al., MODULATED CATHODOLUMINESCENCE FOR EXTENDED DEFECT CHARACTERIZATION, Materials science & engineering. B, Solid-state materials for advanced technology, 24(1-3), 1994, pp. 121-123

Authors: KONONCHUK OV NIKITENKO VI ORLOV VI YAKIMOV EB
Citation: Ov. Kononchuk et al., EFFECT OF DISLOCATION LOOP SIZE ON THE DEEP-LEVEL TRANSIENT SPECTRUM IN SI, Physica status solidi. a, Applied research, 143(1), 1994, pp. 110000005-110000007

Authors: SOLTANOVICH OA YAKIMOV EB YARYKIN NA
Citation: Oa. Soltanovich et al., EFFECT OF DEEP-LEVEL ATHERMAL RECHARGING ON DLTS SPECTRA IN HGCDTE, Physica status solidi. a, Applied research, 136(2), 1993, pp. 455-463
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