Citation: L. Yan et al., Study of surface chemical changes and erosion rates for CV-1144-0 siliconeunder electron cyclotron resonance oxygen plasma exposure, J VAC SCI A, 19(2), 2001, pp. 447-454
Authors:
Franke, E
Schubert, M
Trimble, CL
DeVries, MJ
Woollam, JA
Citation: E. Franke et al., Optical properties of amorphous and polycrystalline tantalum oxide thin films measured by spectroscopic ellipsometry from 0.03 to 8.5 eV, THIN SOL FI, 388(1-2), 2001, pp. 283-289
Authors:
Zangooie, S
Schubert, M
Thompson, DW
Woollam, JA
Citation: S. Zangooie et al., Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs, APPL PHYS L, 78(7), 2001, pp. 937-939
Authors:
Schubert, M
Kasic, A
Tiwald, TE
Woollam, JA
Harle, V
Scholz, F
Citation: M. Schubert et al., Phonons and free carriers in a strained hexagonal GaN-AlN superlattice measured by infrared ellipsometry and Raman spectroscopy, MRS I J N S, 5, 2000, pp. NIL_610-NIL_615
Citation: S. Zangooie et Ja. Woollam, Ellipsometric characterization of thin Porous GaAs layers formed in HF solutions, J MAT SCI L, 19(24), 2000, pp. 2171-2173
Authors:
Bungay, CL
Tiwald, TE
Devries, MJ
Dworak, BJ
Woollam, JA
Citation: Cl. Bungay et al., Characterization of UV irradiated space application polymers by spectroscopic ellipsometry, POLYM ENG S, 40(2), 2000, pp. 300-309
Authors:
Franke, E
Trimble, CL
DeVries, MJ
Woollam, JA
Schubert, M
Frost, F
Citation: E. Franke et al., Dielectric function of amorphous tantalum oxide from the far infrared to the deep ultraviolet spectral region measured by spectroscopic ellipsometry, J APPL PHYS, 88(9), 2000, pp. 5166-5174
Authors:
Gao, X
DeVries, MJ
Thompson, DW
Woollam, JA
Citation: X. Gao et al., Dielectric tensor for interfaces and individual layers in magnetic multilayer structures, J APPL PHYS, 88(5), 2000, pp. 2775-2780
Authors:
Franke, E
Schubert, M
Woollam, JA
Hecht, JD
Wagner, G
Neumann, H
Bigl, F
Citation: E. Franke et al., In situ ellipsometry growth characterization of dual ion beam deposited boron nitride thin films, J APPL PHYS, 87(5), 2000, pp. 2593-2599
Authors:
Schubert, M
Woollam, JA
Kasic, A
Rheinlander, B
Off, J
Kuhn, B
Scholz, F
Citation: M. Schubert et al., Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry, PHYS ST S-B, 216(1), 1999, pp. 655-658
Authors:
Tiwald, TE
Woollam, JA
Zollner, S
Christiansen, J
Gregory, RB
Wetteroth, T
Wilson, SR
Powell, AR
Citation: Te. Tiwald et al., Carrier concentration and lattice absorption in bulk and epitaxial siliconcarbide determined using infrared ellipsometry, PHYS REV B, 60(16), 1999, pp. 11464-11474
Authors:
Trimble, C
DeVries, M
Hale, JS
Thompson, DW
Tiwald, TE
Woollam, JA
Citation: C. Trimble et al., Infrared emittance modulation devices using electrochromic crystalline tungsten oxide, polymer conductor, and nickel oxide, THIN SOL FI, 356, 1999, pp. 26-34
Authors:
Schubert, M
Woollam, JA
Leibiger, G
Rheinlander, B
Pietzonka, I
Sass, T
Gottschalch, V
Citation: M. Schubert et al., Isotropic dielectric functions of highly disordered AlxGa1-xInP (0 <= x <=1) lattice matched to GaAs, J APPL PHYS, 86(4), 1999, pp. 2025-2033