Results: 1-25 | 26-27
Results: 1-25/27

Authors: Zangooie, S Schubert, M Tiwald, TE Woollam, JA
Citation: S. Zangooie et al., Infrared optical properties of aged porous GaAs, J MATER RES, 16(5), 2001, pp. 1241-1244

Authors: Yan, L Gao, X Bungay, C Woollam, JA
Citation: L. Yan et al., Study of surface chemical changes and erosion rates for CV-1144-0 siliconeunder electron cyclotron resonance oxygen plasma exposure, J VAC SCI A, 19(2), 2001, pp. 447-454

Authors: Franke, E Schubert, M Trimble, CL DeVries, MJ Woollam, JA
Citation: E. Franke et al., Optical properties of amorphous and polycrystalline tantalum oxide thin films measured by spectroscopic ellipsometry from 0.03 to 8.5 eV, THIN SOL FI, 388(1-2), 2001, pp. 283-289

Authors: Zangooie, S Schubert, M Thompson, DW Woollam, JA
Citation: S. Zangooie et al., Infrared response of multiple-component free-carrier plasma in heavily doped p-type GaAs, APPL PHYS L, 78(7), 2001, pp. 937-939

Authors: Zangooie, S Schubert, M Trimble, C Thompson, DW Woollam, JA
Citation: S. Zangooie et al., Infrared ellipsometry characterization of porous silicon Bragg reflectors, APPL OPTICS, 40(6), 2001, pp. 906-912

Authors: Schubert, M Kasic, A Tiwald, TE Woollam, JA Harle, V Scholz, F
Citation: M. Schubert et al., Phonons and free carriers in a strained hexagonal GaN-AlN superlattice measured by infrared ellipsometry and Raman spectroscopy, MRS I J N S, 5, 2000, pp. NIL_610-NIL_615

Authors: Sossna, E Kassing, R Rangelow, IW Herzinger, CM Tiwald, TE Woollam, JA Wagner, T
Citation: E. Sossna et al., Thickness analysis of silicon membranes for stencil masks, J VAC SCI B, 18(6), 2000, pp. 3259-3263

Authors: Zollner, S Demkov, AA Liu, R Fejes, PL Gregory, RB Alluri, P Curless, JA Yu, Z Ramdani, J Droopad, R Tiwald, TE Hilfiker, JN Woollam, JA
Citation: S. Zollner et al., Optical properties of bulk and thin-film SrTiO3 on Si and Pt, J VAC SCI B, 18(4), 2000, pp. 2242-2254

Authors: Zangooie, S Woollam, JA Arwin, H
Citation: S. Zangooie et al., Self-organization in porous 6H-SiC, J MATER RES, 15(9), 2000, pp. 1860-1863

Authors: Zangooie, S Woollam, JA
Citation: S. Zangooie et Ja. Woollam, Ellipsometric characterization of thin Porous GaAs layers formed in HF solutions, J MAT SCI L, 19(24), 2000, pp. 2171-2173

Authors: Bungay, CL Tiwald, TE Devries, MJ Dworak, BJ Woollam, JA
Citation: Cl. Bungay et al., Characterization of UV irradiated space application polymers by spectroscopic ellipsometry, POLYM ENG S, 40(2), 2000, pp. 300-309

Authors: Franke, E Trimble, CL DeVries, MJ Woollam, JA Schubert, M Frost, F
Citation: E. Franke et al., Dielectric function of amorphous tantalum oxide from the far infrared to the deep ultraviolet spectral region measured by spectroscopic ellipsometry, J APPL PHYS, 88(9), 2000, pp. 5166-5174

Authors: Gao, X DeVries, MJ Thompson, DW Woollam, JA
Citation: X. Gao et al., Dielectric tensor for interfaces and individual layers in magnetic multilayer structures, J APPL PHYS, 88(5), 2000, pp. 2775-2780

Authors: Franke, EB Trimble, CL Hale, JS Schubert, M Woollam, JA
Citation: Eb. Franke et al., Infrared switching electrochromic devices based on tungsten oxide, J APPL PHYS, 88(10), 2000, pp. 5777-5784

Authors: Franke, E Schubert, M Woollam, JA Hecht, JD Wagner, G Neumann, H Bigl, F
Citation: E. Franke et al., In situ ellipsometry growth characterization of dual ion beam deposited boron nitride thin films, J APPL PHYS, 87(5), 2000, pp. 2593-2599

Authors: Franke, EB Trimble, CL Schubert, M Woollam, JA Hale, JS
Citation: Eb. Franke et al., All-solid-state electrochromic reflectance device for emittance modulationin the far-infrared spectral region, APPL PHYS L, 77(7), 2000, pp. 930-932

Authors: DeVries, MJ Trimble, C Tiwald, TE Thompson, DW Woollam, JA Hale, JS
Citation: Mj. Devries et al., Optical constants of crystalline WO3 deposited by magnetron sputtering, J VAC SCI A, 17(5), 1999, pp. 2906-2910

Authors: Schubert, M Woollam, JA Kasic, A Rheinlander, B Off, J Kuhn, B Scholz, F
Citation: M. Schubert et al., Free-carrier response and lattice modes of group III-nitride heterostructures measured by infrared ellipsometry, PHYS ST S-B, 216(1), 1999, pp. 655-658

Authors: Zollner, S Liu, R Konkar, A Gutt, J Wilson, SR Tiwald, TI Woollam, JA Hilfiker, JN
Citation: S. Zollner et al., Dielectric function of polycrystalline SiC from 190 nm to 15 mu m, PHYS ST S-B, 215(1), 1999, pp. 21-25

Authors: Schubert, M Hofmann, T Rheinlander, B Pietzonka, I Sass, T Gottschalch, V Woollam, JA
Citation: M. Schubert et al., Near-band-gap CuPt-order-induced birefringence in Al0.48Ga0.52InP2, PHYS REV B, 60(24), 1999, pp. 16618-16634

Authors: Tiwald, TE Woollam, JA Zollner, S Christiansen, J Gregory, RB Wetteroth, T Wilson, SR Powell, AR
Citation: Te. Tiwald et al., Carrier concentration and lattice absorption in bulk and epitaxial siliconcarbide determined using infrared ellipsometry, PHYS REV B, 60(16), 1999, pp. 11464-11474

Authors: Gao, X Woollam, JA Kirby, RD Sellmyer, DJ Tanaka, CT Nowak, J Moodera, JS
Citation: X. Gao et al., Dielectric tensor for magneto-optic NiMnSb, PHYS REV B, 59(15), 1999, pp. 9965-9971

Authors: Trimble, C DeVries, M Hale, JS Thompson, DW Tiwald, TE Woollam, JA
Citation: C. Trimble et al., Infrared emittance modulation devices using electrochromic crystalline tungsten oxide, polymer conductor, and nickel oxide, THIN SOL FI, 356, 1999, pp. 26-34

Authors: Hale, JS Woollam, JA
Citation: Js. Hale et Ja. Woollam, Prospects for IR emissivity control using electrochromic structures, THIN SOL FI, 339(1-2), 1999, pp. 174-180

Authors: Schubert, M Woollam, JA Leibiger, G Rheinlander, B Pietzonka, I Sass, T Gottschalch, V
Citation: M. Schubert et al., Isotropic dielectric functions of highly disordered AlxGa1-xInP (0 <= x <=1) lattice matched to GaAs, J APPL PHYS, 86(4), 1999, pp. 2025-2033
Risultati: 1-25 | 26-27