Results: 1-16 |
Results: 16

Authors: Washio, K
Citation: K. Washio, Identification of Dof proteins with implication in the gibberellin-regulated expression of a peptidase gene following the germination of rice grains, BBA-GENE ST, 1520(1), 2001, pp. 54-62

Authors: Nishikoori, M Washio, K Hase, A Morita, N Okuyama, H
Citation: M. Nishikoori et al., Cloning and characterization of cDNA of the GPI-anchored purple acid phosphatase and its root tissue distribution in Spirodela oligorrhiza, PHYSL PLANT, 113(2), 2001, pp. 241-248

Authors: Washio, K Hayami, R Ohue, E Oda, K Tanabe, M Shimamoto, H Kondo, M
Citation: K. Washio et al., 67-GHz static frequency divider using 0.2-mu m self-aligned SiGeHBTs, IEEE MICR T, 49(1), 2001, pp. 3-8

Authors: Washio, K Kondo, M Ohue, E Oda, K Hayami, R Tanabe, M Shimamoto, H Harada, T
Citation: K. Washio et al., A 0.2-mu m self-aligned selective-epitaxial-growth SiGeHBT featuring 107-GHz f(max) and 6.7-ps ECL, IEEE DEVICE, 48(9), 2001, pp. 1989-1994

Authors: Kondo, M Shimamoto, H Washio, K
Citation: M. Kondo et al., Variation in emitter diffusion depth by TiSi2 formation on polysilicon emitters of Si bipolar transistors, IEEE DEVICE, 48(9), 2001, pp. 2108-2117

Authors: Washio, K Ohue, E Oda, K Hayami, R Tanabe, M Shimamoto, H
Citation: K. Washio et al., A 50-GHz static frequency divider and 40-Gb/s MUX/DEMUX using self-alignedselective-epitaxial-growth SiGeHBTs with 8-ps ECE, IEEE DEVICE, 48(7), 2001, pp. 1482-1487

Authors: Kiyota, Y Kikuchi, T Washio, K Inada, T
Citation: Y. Kiyota et al., Reduction of base resistance and increase in cutoff frequency of Si bipolar transistor using rapid vapor-phase doping, JPN J A P 1, 39(4B), 2000, pp. 1987-1991

Authors: Washio, K
Citation: K. Washio, Overview of lasers for materials processing and laser materials processingtechnologies, NEC RES DEV, 41(2), 2000, pp. 171-177

Authors: Washio, K Ohue, E Oda, K Hayami, R Tanabe, M Shimamoto, H Masuda, T Ohhata, K Kondo, M
Citation: K. Washio et al., Self-aligned selective-epitaxial-growth SiGeHBTs: process, device, and ICs, THIN SOL FI, 369(1-2), 2000, pp. 352-357

Authors: Oda, K Ohue, E Tanabe, M Shimamoto, H Washio, K
Citation: K. Oda et al., Si1-xGex selective epitaxial growth for ultra-high-speed self-aligned HBTs, THIN SOL FI, 369(1-2), 2000, pp. 358-361

Authors: Shimamoto, H Onai, T Ohue, E Tanabe, M Washio, K
Citation: H. Shimamoto et al., High-frequency, low-noise Si bipolar transistor fabricated using self-aligned metal/IDP technology, IEICE TR EL, E82C(11), 1999, pp. 2007-2012

Authors: Oda, K Ohue, E Tanabe, M Shimamoto, H Washio, K
Citation: K. Oda et al., DC and AC performances in selectively grown SiGe-base HBTs, IEICE TR EL, E82C(11), 1999, pp. 2013-2020

Authors: Washio, K
Citation: K. Washio, SiGeHBTs and ICs for optical-fiber communication systems, SOL ST ELEC, 43(8), 1999, pp. 1619-1625

Authors: Washio, K Ohue, E Oda, K Tanabe, M Shimamoto, H Onai, T Kondo, M
Citation: K. Washio et al., A selective-epitaxial-growth SiGe-base HBT with SMI electrodes featuring 9.3-ps ECL-gate delay, IEEE DEVICE, 46(7), 1999, pp. 1411-1416

Authors: Ohhata, K Masuda, T Ohue, E Washio, K
Citation: K. Ohhata et al., Design of a 32.7-GHz bandwidth AGC amplifier IC with wide dynamic range implemented in SiGeHBT, IEEE J SOLI, 34(9), 1999, pp. 1290-1297

Authors: Ohhata, K Masuda, T Imai, K Takeyari, R Washio, K
Citation: K. Ohhata et al., A wide-dynamic-range, high-transimpedance Si bipolar preamplifier IC for 10-Gb/s optical fiber links, IEEE J SOLI, 34(1), 1999, pp. 18-24
Risultati: 1-16 |