Authors:
Brenot, R
Vanderhaghen, R
Drevillon, B
Cabarrocas, PRI
Citation: R. Brenot et al., Measurement of transversal ambipolar diffusion coefficient in microcrystalline silicon, J NON-CRYST, 266, 2000, pp. 336-340
Citation: P. Chatterjee et al., The origin of current gain under illumination in amorphous silicon n-i-p-i-n structures, J APPL PHYS, 87(4), 2000, pp. 1874-1881
Authors:
Cabarrocas, PRI
Brenot, R
Bulkin, P
Vanderhaghen, R
Drevillon, B
French, I
Citation: Pri. Cabarrocas et al., Stable microcrystalline silicon thin-film transistors produced by the layer-by-layer technique, J APPL PHYS, 86(12), 1999, pp. 7079-7082
Authors:
Brenot, R
Vanderhaghen, R
Drevillon, B
Cabarrocas, PRI
Citation: R. Brenot et al., Real-time measurement of the evolution of carrier mobility in thin-film semiconductors during growth, APPL PHYS L, 74(1), 1999, pp. 58-60