Results: 1-25 | 26-27
Results: 1-25/27

Authors: Avramescu, A Ueta, A Uesugi, K Suemune, I
Citation: A. Avramescu et al., Selective growth of highly packed array of ZnCdS quantum dots with a mask prepared by atomic force microscope nanolithography, JPN J A P 1, 40(3B), 2001, pp. 1899-1901

Authors: Takeuchi, A Uesugi, K Suzuki, Y Aoki, S
Citation: A. Takeuchi et al., Hard X-ray microtomography using X-ray imaging optics, JPN J A P 1, 40(3A), 2001, pp. 1499-1503

Authors: Ok, YW Choi, CJ Seong, TY Uesugi, K Suemune, I
Citation: Yw. Ok et al., Structural properties of GaAsN grown on (001) GaAs by metalorganic molecular beam epitaxy, J ELEC MAT, 30(7), 2001, pp. 900-906

Authors: Yang, M Zhang, Y Qi, R Uesugi, K Myoga, H
Citation: M. Yang et al., Improved O-3/H2O2 oxidation process for wastewater reclamation, WATER SCI T, 43(10), 2001, pp. 311-318

Authors: Uesugi, K Suzuki, Y Yagi, N Tsuchiyama, A Nakano, T
Citation: K. Uesugi et al., Development of high spatial resolution X-ray CT system at BL47XU in SPring-8, NUCL INST A, 467, 2001, pp. 853-856

Authors: Kamijo, N Suzuki, Y Awajia, M Takeuchi, A Uesugi, K Yasumoto, M Tamura, S Kohmura, Y Duevel, A Rudolph, D Schmahl, G
Citation: N. Kamijo et al., Characterization of the sputtered-sliced zone plate for high energy X-rays, NUCL INST A, 467, 2001, pp. 868-871

Authors: Takeuchi, A Suzuki, Y Uesugi, K Aoki, S
Citation: A. Takeuchi et al., At wavelength focusing properties evaluation of the Wolter type grazing incidence mirror, NUCL INST A, 467, 2001, pp. 302-304

Authors: Ichikawa, Y Kawamura, K Uesugi, K Seo, YS Fujii, N
Citation: Y. Ichikawa et al., Micro- and macrobehavior of granitic rock: observations and viscoelastic homogenization analysis, COMPUT METH, 191(1-2), 2001, pp. 47-72

Authors: Uesugi, K Suemune, I
Citation: K. Uesugi et I. Suemune, Highly conductive GaAsNSe alloys grown on GaAs and their nonalloyed ohmic properties, APPL PHYS L, 79(20), 2001, pp. 3284-3286

Authors: Kumano, H Nashiki, H Suemune, I Suzuki, H Uesugi, K He, AQ Otsuka, N
Citation: H. Kumano et al., Intrinsic and extrinsic excitonic features in MgS/ZnSe superlattices revealed by microspectroscopy, JPN J A P 1, 39(2A), 2000, pp. 501-504

Authors: Honda, M Uesugi, K Yamazaki, H Dezawa, A Mizuguchi, K Yamaji, T Ishibashi, M
Citation: M. Honda et al., Malignant pheochromocytoma lacking clinical features of catecholamine excess until the late stage, INTERN MED, 39(10), 2000, pp. 820-825

Authors: Yang, M Uesugi, K Myoga, H
Citation: M. Yang et al., Study on by-products of ozonation during ammonia removal under the existence of bromide: Factors affecting formation and removal of the by-products, OZONE-SCI E, 22(1), 2000, pp. 23-29

Authors: Suemune, I Morooka, N Uesugi, K Ok, YW Seong, TY
Citation: I. Suemune et al., Formation of wire-like surfaces and lateral composition modulation in GaAsN grown by metalorganic molecular-beam epitaxy, J CRYST GR, 221, 2000, pp. 546-550

Authors: Avramescu, A Ueta, A Uesugi, K Suemune, I
Citation: A. Avramescu et al., New type of ZnCdS/ZnMgCdS heterostructures lattice-matched to GaAs for selective-area growth, J CRYST GR, 214, 2000, pp. 125-129

Authors: Avramescu, A Ueta, A Uesugi, K Suemune, I
Citation: A. Avramescu et al., Atomic force microscope based patterning of carbonaceous masks for selective area growth on semiconductor surfaces, J APPL PHYS, 88(6), 2000, pp. 3158-3165

Authors: Mochizuki, K Uesugi, K Asbeck, PM Gotoh, J Mishima, T Hirata, K Oda, H
Citation: K. Mochizuki et al., GaN/W/W-oxide metal base transistor with very large current gain and powergain, APPL PHYS L, 77(5), 2000, pp. 753-755

Authors: Suemune, I Uesugi, K Walukiewicz, W
Citation: I. Suemune et al., Role of nitrogen in the reduced temperature dependence of band-gap energy in GaNAs, APPL PHYS L, 77(19), 2000, pp. 3021-3023

Authors: Uesugi, K Suemune, I Hasegawa, T Akutagawa, T Nakamura, T
Citation: K. Uesugi et al., Temperature dependence of band gap energies of GaAsN alloys, APPL PHYS L, 76(10), 2000, pp. 1285-1287

Authors: Avramescu, A Ueta, A Uesugi, K Suemune, I
Citation: A. Avramescu et al., Nucleation in the nanometer scale selective area growth of II-VI semiconductors, JPN J A P 2, 38(5B), 1999, pp. L563-L566

Authors: Morooka, N Uesugi, K Suemune, I
Citation: N. Morooka et al., Role of indium on nitrogen incorporation in GaNAs grown by metalorganic molecular-beam epitaxy, JPN J A P 2, 38(11B), 1999, pp. L1309-L1311

Authors: Soda, S Uesugi, K Ike, M Fujita, M
Citation: S. Soda et al., Application of a floc-forming genetically engineered microorganism to a sequencing batch reactor for phenolic wastewater treatment, J BIOSCI BI, 88(1), 1999, pp. 85-91

Authors: Ohashi, K Ohnishi, T Ishikawa, T Tani, H Uesugi, K Takagi, M
Citation: K. Ohashi et al., Oncogenic osteomalacia presenting as bilateral stress fractures of the tibia, SKELETAL RA, 28(1), 1999, pp. 46-48

Authors: Yang, M Uesugi, K Myoga, H
Citation: M. Yang et al., Ammonia removal in bubble column by ozonation in the presence of bromide, WATER RES, 33(8), 1999, pp. 1911-1917

Authors: Uesugi, K Morooka, N Suemune, I
Citation: K. Uesugi et al., Strain effect on the N composition dependence of GaNAs bandgap energy grown on (001) GaAs by metalorganic molecular beam epitaxy, J CRYST GR, 202, 1999, pp. 355-358

Authors: Uesugi, K Morooka, N Suemune, I
Citation: K. Uesugi et al., Reexamination of N composition dependence of coherently grown GaNAs band gap energy with high-resolution x-ray diffraction mapping measurements, APPL PHYS L, 74(9), 1999, pp. 1254-1256
Risultati: 1-25 | 26-27